Spin memory and spin-lattice relaxation in two-dimensional hexagonal crystals

نویسندگان

  • H. Ochoa
  • F. Guinea
  • V. I. Fal’ko
چکیده

We propose a theory of spin relaxation of electrons and holes in two-dimensional hexagonal crystals such as atomic layers of transition-metal dichalcogenides (MoS2, WSe2, etc.). We show that, even in intrinsically defect-free crystals, their flexural deformations are able to generate spin relaxation of carriers. Based on symmetry analysis, we formulate a generic model for spin-lattice coupling between electrons and flexural deformations and use it to determine temperatureand material-dependent spin lifetimes in atomic crystals in ambient conditions.

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تاریخ انتشار 2013